VTB1112BH
SILICON PHOTODIODES

From Excelitas Technologies Sensors

Active Area0.0025 sq.in.
Angle, Response±15 °
Capacitance, Junction0.31 nF
Current, Dark100 pA
Current, Short Circuit6 μA
Package TypeTO-46
Primary TypePhoto
Resistance, Shunt0.25 Gigaohms
Spectral Application Range330 to 720 nm
Temperature, Operating-40 to +110 °C
Voltage, Breakdown40 V
Voltage, Open Circuit420 mV

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