T860N30TOF
Silicon Controlled Rectifier

From Eupec Power Semiconductors

@ t(w) (s) (Test Condition)10m
@I(T) (A) (Test Condition)3.8k
@Temp. (°C) (Test Condition)125
I(D) Max. (A) Leakage Current250m
I(GT) Max. (A)250m
I(H) Max.(A) Holding Current500m
I(T) Max.(A) On-state Current860±
I(TSM) Max. (A)17k
MilitaryN
PackageTO-200var74
V(DRM) Max.(V)Rep.Pk.Off Volt.3.0k
V(GT) Max.(V)2.0
V(T) Max. (V)2.80
dv/dt Min. (V/us)1.0k
t(q) Typ. (s)400u

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