FHX04LG KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Sumitomo Electric Industries, Ltd.
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 3.5 V |
EU RoHS Compliant | Yes |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | KU BAND |
Lead Free | Yes |
Mfr Package Description | HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | ROUND |
Package Style | DISK BUTTON |
Power Gain-Min (Gp) | 9.5 dB |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | FLAT |
Terminal Position | RADIAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
Transistor Type | RF SMALL SIGNAL |