M52S32321A-10BG
1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeDUAL BANK PAGE BURST
Access Time-Max (tRAC)8 ns
Memory Density3.36E7 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width32
Mfr Package Description8 X 13 MM, LEAD FREE, VFBGA-90
Number of Functions1
Number of Ports1
Number of Terminals90
Number of Words1.05E6 words
Number of Words Code1M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization1M X 32
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.3 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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