M13S128324A-6BIG
4M X 32 DDR DRAM, 0.7 ns, PBGA144

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)0.7000 ns
Memory Density1.34E8 deg
Memory IC TypeDDR DRAM
Memory Width32
Mfr Package Description12 X 12 MM, LEAD FREE, MO-205, FBGA-144
Number of Functions1
Number of Ports1
Number of Terminals144
Number of Words4.19E6 words
Number of Words Code4M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization4M X 32
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)2.62 V
Supply Voltage-Min (Vsup)2.32 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
Temperature GradeINDUSTRIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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