M12S64164A-10TG 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
From Elite Semiconductor Memory Technology, Inc.
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (tRAC) | 8 ns |
| Memory Density | 6.71E7 deg |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Mfr Package Description | 0.400 INCH, LEAD FREE, TSOP2-54 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 54 |
| Number of Words | 4.19E6 words |
| Number of Words Code | 4M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 4M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Temperature Grade | COMMERCIAL |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | DUAL |
