M12S128168A-6BG
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)5.4 ns
Memory Density1.34E8 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width16
Mfr Package Description8 X 8 MM, LEAD FREE, BGA-54
Number of Functions1
Number of Ports1
Number of Terminals54
Number of Words8.39E6 words
Number of Words Code8M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization8M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeSQUARE
Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.3 V
Supply Voltage-Nom (Vsup)2.5 V
Surface MountYes
Temperature GradeCOMMERCIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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