M12L2561616A-7TIG
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)5.4 ns
Memory Density2.68E8 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width16
Mfr Package Description0.400 INCH, LEAD FREE, TSOP2-54
Number of Functions1
Number of Ports1
Number of Terminals54
Number of Words1.68E7 words
Number of Words Code16M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization16M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)3 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
Temperature GradeINDUSTRIAL
Terminal FormGULL WING
Terminal Pitch0.8000 mm
Terminal PositionDUAL

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