M12L16161A-7BG
1M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeDUAL BANK PAGE BURST
Access Time-Max (tRAC)6 ns
Memory Density1.68E7 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width16
Mfr Package Description6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
Number of Functions1
Number of Ports1
Number of Terminals60
Number of Words1.05E6 words
Number of Words Code1M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization1M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)3 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FormBALL
Terminal Pitch0.6500 mm
Terminal PositionBOTTOM

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