M12L16161A-5TIG 1M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO50
From Elite Semiconductor Memory Technology, Inc.
| Status | ACTIVE |
| Access Mode | DUAL BANK PAGE BURST |
| Access Time-Max (tRAC) | 4.5 ns |
| Memory Density | 1.68E7 deg |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Mfr Package Description | 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 50 |
| Number of Words | 1.05E6 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 1M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | DUAL |
