2N4957+JAN
Bipolar PNP UHF-Microwave Transisitor

From Defense Supply Center Columbus

@Freq. (Hz) (Test Condition)1.0M
@I(C) (A) (Test Condition)2.0m
@V(CBO) (V) (Test Condition)10
@V(CE) (V) (Test Condition)10
Absolute Max. Power Diss. (W)200m
C(obo) (Max) (F)800f
I(C) Abs.(A) Collector Current30m
I(CBO) Max. (A)100n
Mil NumberJAN2N4957
MilitaryY
Noise Figure Max. (dB)3.0
PackageTO-72
Power Gain Min. (dB)17
Semiconductor MaterialSilicon
V(BR)CBO (V)30
V(BR)CEO (V)30
f(T) Min. (Hz) Transition Freq1.2G
h(FE) Max. Current gain.150
h(FE) Min. Static Current Gain20

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