VN10LPM1 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From DIODES Incorporated
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 0.2700 A |
| Drain-source On Resistance-Max | 7.5 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G3 |
| JESD-609 Code | e3 |
| Mfr Package Description | E-LINE PACKAGE-3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | COMMERCIAL |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
