CYD04S36V18-200BBXI 128K X 36 DUAL-PORT SRAM, 9 ns, PBGA256
From Cypress Semiconductor Corp.
| Status | ACTIVE |
| Access Time-Max (tACC) | 9 ns |
| China RoHS Compliant | Yes |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 4.72E6 deg |
| Memory IC Type | DUAL-PORT SRAM |
| Memory Width | 36 |
| Mfr Package Description | 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 |
| Number of Functions | 1 |
| Number of Terminals | 256 |
| Number of Words | 131072 words |
| Number of Words Code | 128K |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 128K X 36 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 1.58 V |
| Supply Voltage-Min (Vsup) | 1.42 V |
| Supply Voltage-Nom (Vsup) | 1.5 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Pitch | 1 mm |
| Terminal Position | BOTTOM |
