CYD04S36V18-167BBXI 128K X 36 DUAL-PORT SRAM, 11 ns, PBGA256
From Cypress Semiconductor Corp.
Status | ACTIVE |
Access Time-Max (tACC) | 11 ns |
China RoHS Compliant | Yes |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Memory Density | 4.72E6 deg |
Memory IC Type | DUAL-PORT SRAM |
Memory Width | 36 |
Mfr Package Description | 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 |
Number of Functions | 1 |
Number of Terminals | 256 |
Number of Words | 131072 words |
Number of Words Code | 128K |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 128K X 36 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | SQUARE |
Package Style | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 1.58 V |
Supply Voltage-Min (Vsup) | 1.42 V |
Supply Voltage-Nom (Vsup) | 1.5 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | BALL |
Terminal Pitch | 1 mm |
Terminal Position | BOTTOM |