CGHV60170D RF JFET Transistors DC-6GHz 170W GaN 50Volt
From Cree, Inc.
| Application | - |
| Brand | Cree, Inc. |
| Class | - |
| Development Kit | - |
| Forward Transconductance - Min | - |
| Frequency | 6 GHz |
| Gain | 18 dB |
| Gate-Source Cutoff Voltage | - |
| Id - Continuous Drain Current | 12.6 A |
| Manufacturer | Cree, Inc. |
| Maximum Drain Gate Voltage | - |
| Maximum Operating Temperature | - |
| Minimum Operating Temperature | - |
| Mounting Style | SMD/SMT |
| NF - Noise Figure | - |
| Operating Temperature Range | - |
| Output Power | 170 W |
| P1dB - Compression Point | - |
| Package / Case | Bare Die |
| Packaging | Gel Pack |
| Pd - Power Dissipation | - |
| Product Category | RF JFET Transistors |
| Rds On - Drain-Source Resistance | - |
| RoHS | Details |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Breakdown Voltage | - |
| Vgs th - Gate-Source Threshold Voltage | - |
