CGH40045P S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
From Cree, Inc.
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 120 V |
FET Technology | HIGH ELECTRON MOBILITY |
Highest Frequency Band | S BAND |
Mfr Package Description | ROHS COMPLIANT PACKAGE-2 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLATPACK |
Surface Mount | Yes |
Terminal Form | FLAT |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM NITRIDE |
Transistor Type | RF POWER |