CGH35240F RF JFET Transistors 3.1-3.5GHz 240W GaN Gain @3.3GHz 11.6dB
From Cree, Inc.
| Application | - |
| Brand | Cree, Inc. |
| Class | - |
| Configuration | Single |
| Development Kit | CGH35240F-TB |
| Forward Transconductance - Min | - |
| Frequency | 3.1 GHz to 3.5 GHz |
| Gain | 11.6 dB |
| Gate-Source Cutoff Voltage | - |
| Id - Continuous Drain Current | 24 A |
| Manufacturer | Cree, Inc. |
| Maximum Drain Gate Voltage | - |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Mounting Style | Screw |
| NF - Noise Figure | - |
| Operating Temperature Range | - |
| Output Power | 240 W |
| P1dB - Compression Point | - |
| Package / Case | 440201 |
| Packaging | Tray |
| Pd - Power Dissipation | - |
| Product Category | RF JFET Transistors |
| Rds On - Drain-Source Resistance | - |
| RoHS | Details |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to + 2 V |
| Vgs th - Gate-Source Threshold Voltage | - 3 V |
