CMBTA13 NPN Darlington Transistor
From Continental Device India Limited
@I(B) (A) (Test Condition) | 100u |
@I(C) (A) (Test Condition) | 100m |
@V(CBO) (V) (Test Condition) | 30 |
@V(CE) (V) (Test Condition) | 5.0 |
Absolute Max. Power Diss. (W) | 250m |
I(C) Abs.(A) Collector Current | 300m |
I(CBO) Max. (A) | 100n |
Military | N |
Package | TO-236AA |
Semiconductor Material | Silicon |
V(BR)CBO (V) | 30 |
V(CE)sat Max.(V) | 1.5 |
f(T) Min. (Hz) Transition Freq | 125M |
h(FE) Min. Static Current Gain | 5.0k |