Product Datasheet Search Results:
9 Pages, 548 KB, Original- BSP315PH6327
- Infineon Technologies Ag
- 1.17 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
10 Pages, 491 KB, Original- BSP315PH6327XTSA1
- Infineon Technologies
- MOSFET P-Ch -60V -1.17A SOT-223-3
Product Details Search Results:
Infineon.com/BSP315PH6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"24 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"...
1619 Bytes - 14:25:41, 17 November 2024
Infineon.com/BSP315PH6327XTSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current ...
1672 Bytes - 14:25:41, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSP315P.pdf | 0.19 | 1 | Request |
