Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25mA","Frequency - Transition":"25GHz","Noise Figure (dB Typ @ f)":"1.25dB @ 1.8GHz","Transistor Type":"NPN","Product Photos":"SOT-343 PKG","Family":"RF Transistors (BJT)","Standard Package":"3,000","Series":"-","PCN Packaging":"Recyclable Glass Carrier 14/Oct/2014","Voltage - Collector Emitter Breakdown (Max)":"5V","Supplier Device Package":"SOT-343","Packaging":"Tape & Reel (TR)","Datasheets":"BFP405","Power - Max":"75mW","Gai...

{"Product Category":"RF Bipolar Transistors","Series":"BFP405","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"35mA","Frequency - Transition":"25GHz","Noise Figure (dB Typ @ f)":"1.1dB @ 1.8GHz","Transistor Type":"NPN","Product Photos":"SOT-343 PKG","Family":"RF Transistors (BJT)","Standard Package":"3,000","Series":"-","PCN Packaging":"Recyclable Glass Carrier 14/Oct/2014","Voltage - Collector Emitter Breakdown (Max)":"5V","Supplier Device Package":"SOT-343","Packaging":"Tape & Reel (TR)","Datasheets":"BFP420","Power - Max":"160mW","Gai...

{"Collector Current (DC) ":"0.06(A)","Power Gain":"21(dB)","Noise Figure (Max)":"1.1(TYP)(dB)","Emitter-Base Voltage":"1.5(V)","Packaging":"Tape and Reel","Power Dissipation":"0.21(W)","Operating Temp Range":"-65C to 150C","Package Type":"SOT-343","Collector-Base Voltage":"15(V)","DC Current Gain":"60","Configuration":"Single Dual Emitter","Type":"NPN","Maximum Transition Frequency":"25000(TYP)","Number of Elements":"1"}...

{"C1/C2 Min. Capacitance Ratio":"2.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"3.0k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"400f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"3.0k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"600f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1/C2 Min. Capacitance Ratio":"3.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2.8k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"800f","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1/C2 Min. Capacitance Ratio":"3.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2.8k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"1.0p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1/C2 Min. Capacitance Ratio":"4.3","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2.6k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"1.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1/C2 Min. Capacitance Ratio":"4.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2.4k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"1.5p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1/C2 Min. Capacitance Ratio":"4.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"45","Semiconductor Material":"Silicon","Q Factor Min.":"2.3k","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"1.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...