VQ2001J 0.6 A, 30 V, 2 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
From Atmel Corporation
Status | Discontinued |
Additional Feature | FAST SWITCHING |
Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 0.6000 A |
Drain-source On Resistance-Max | 2 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDIP-T14 |
Number of Elements | 4 |
Number of Terminals | 14 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE |
Polarity/Channel Type | P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 2 A |
Qualification Status | COMMERCIAL |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |