VLB100-12 VHF BAND, Si, NPN, RF POWER TRANSISTOR
From Advanced Semiconductor, Inc.
Status | Active |
Case Connection | EMITTER |
Collector Current-Max (IC) | 20 A |
Collector-base Capacitance-Max | 400 pF |
Collector-emitter Voltage-Max | 18 V |
Configuration | SINGLE |
DC Current Gain-Min (hFE) | 20 |
Highest Frequency Band | VERY HIGH FREQUENCY BAND |
JESD-30 Code | O-CRFM-F4 |
Mfr Package Description | 0.500 INCH, FM-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Temperature-Max | 200 Cel |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | ROUND |
Package Style | FLANGE MOUNT |
Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 270 W |
Qualification Status | COMMERCIAL |
Sub Category | Other Transistors |
Surface Mount | NO |
Terminal Form | FLAT |
Terminal Position | RADIAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |