VLB100-12
VHF BAND, Si, NPN, RF POWER TRANSISTOR

From Advanced Semiconductor, Inc.

StatusActive
Case ConnectionEMITTER
Collector Current-Max (IC)20 A
Collector-base Capacitance-Max400 pF
Collector-emitter Voltage-Max18 V
ConfigurationSINGLE
DC Current Gain-Min (hFE)20
Highest Frequency BandVERY HIGH FREQUENCY BAND
JESD-30 CodeO-CRFM-F4
Mfr Package Description0.500 INCH, FM-4
Number of Elements1
Number of Terminals4
Operating Temperature-Max200 Cel
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleFLANGE MOUNT
Polarity/Channel TypeNPN
Power Dissipation-Max (Abs)270 W
Qualification StatusCOMMERCIAL
Sub CategoryOther Transistors
Surface MountNO
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON

External links