HF50-12S HF BAND, Si, NPN, RF POWER TRANSISTOR
From Advanced Semiconductor, Inc.
Status | ACTIVE |
Case Connection | EMITTER |
Collector Current-Max (IC) | 12 A |
Collector-base Capacitance-Max | 300 pF |
Collector-emitter Voltage-Max | 18 V |
Configuration | SINGLE |
Highest Frequency Band | HIGH FREQUENCY BAND |
Mfr Package Description | 0.380 INCH, STUD PACKAGE-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | ROUND |
Package Style | POST/STUD MOUNT |
Terminal Form | FLAT |
Terminal Position | RADIAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Polarity | NPN |
Transistor Type | RF POWER |