AT300701
C BAND, 3.3 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

From Advanced Semiconductor, Inc.

StatusACTIVE
Breakdown Voltage-Min30 V
Case ConnectionISOLATED
ConfigurationSINGLE
Diode Cap Tolerance10 %
Diode Capacitance Ratio-Min3.9
Diode Capacitance-Nom (Cd)3.3 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandC BAND
Number of Elements1
Number of Terminals2
Package Body MaterialUNSPECIFIED
Package ShapeROUND
Package StyleLONG FORM
Quality Factor-Min3000
Terminal FormWIRE
Terminal PositionAXIAL
Variable Capacitance Diode ClassificationABRUPT

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