ASB8001 100 V, SILICON, PIN DIODE
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Application | ATTENUATOR; LIMITER; SWITCHING |
| Breakdown Voltage-Min | 100 V |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Forward Resistance-Max | 3 ohm |
| Diode Type | PIN DIODE |
| Frequency Band | KU BAND |
| Minority Carrier Lifetime-Nom | 0.0700 us |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | MICROWAVE |
| Power Dissipation Limit-Max | 0.2500 W |
| Surface Mount | Yes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
