YS190114P62G Silicon Controlled Rectifier
From ABB Semiconductors
@I(T) (A) (Test Condition) | 2.0k |
@Temp. (°C) (Test Condition) | 125 |
I(D) Max. (A) Leakage Current | 600m |
I(GT) Max. (A) | 400m |
I(H) Max.(A) Holding Current | 125m |
I(T) Max.(A) On-state Current | 1.8k± |
I(TSM) Max. (A) | 27k |
Military | N |
Package | TO-200var120 |
V(DRM) Max.(V)Rep.Pk.Off Volt. | 6.2k |
V(GT) Max.(V) | 2.6 |
V(T) Max. (V) | 2.1 |
dv/dt Min. (V/us) | 500 |
t(q) Typ. (s) | 800uò |