YS110101P26D Silicon Controlled Rectifier
From ABB Semiconductors
| @I(T) (A) (Test Condition) | 8.0k |
| @Temp. (°C) (Test Condition) | 125 |
| I(D) Max. (A) Leakage Current | 400m |
| I(GT) Max. (A) | 400m |
| I(H) Max.(A) Holding Current | 125m |
| I(T) Max.(A) On-state Current | 4.3k± |
| I(TSM) Max. (A) | 75k |
| Military | N |
| Package | TO-200var150 |
| V(DRM) Max.(V)Rep.Pk.Off Volt. | 2.6k |
| V(GT) Max.(V) | 2.6 |
| V(T) Max. (V) | 1.7 |
| dv/dt Min. (V/us) | 500 |
| t(q) Typ. (s) | 400uò |
