Product Datasheet Search Results:

AP9997GM.pdf5 Pages, 181 KB, Original
AP9997GM
Advanced Power Electronics Corp. Usa
3 A, 95 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

A-power.com.tw/AP9997GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1502 Bytes - 19:12:10, 29 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
CVCS_25_C3_W_125_20_AP99.pdf1.831Request
AP9920CS2000.pdf1.281Request
AP9927.pdf1.421Request
AP9926.pdf1.421Request
AP9922S.pdf1.281Request
AP9922.pdf1.281Request
AP9920CS.pdf1.281Request
AP9925.pdf1.421Request