Product Datasheet Search Results:
- AP9997GM
- Advanced Power Electronics Corp. Usa
- 3 A, 95 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP9997GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1502 Bytes - 19:12:10, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
CVCS_25_C3_W_125_20_AP99.pdf | 1.83 | 1 | Request | |
AP9920CS2000.pdf | 1.28 | 1 | Request | |
AP9927.pdf | 1.42 | 1 | Request | |
AP9926.pdf | 1.42 | 1 | Request | |
AP9922S.pdf | 1.28 | 1 | Request | |
AP9922.pdf | 1.28 | 1 | Request | |
AP9920CS.pdf | 1.28 | 1 | Request | |
AP9925.pdf | 1.42 | 1 | Request |