Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"266(W)","Continuous Drain Current":"20(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-262","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"AOW, TO262 TO-262-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.1V @ 250\u00b5A","Series":"aMOS\u2122","Standard Package":"1,000","Supplier Device Package":"TO-262","Datasheets":"AOW(F)20S60 TO262 Pkg Drawing","Rds On (Max) @ Id, Vgs":"199 mOhm @ 10A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"266W","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Mounting Type"...