AP9926GM 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Advanced Power Electronics Corp. USA
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V |
Drain-source On Resistance-Max | 0.0300 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | ROHS COMPLIANT, SOP-8 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 2 W |
Pulsed Drain Current-Max (IDM) | 26 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |