AP4521GEH 11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
From Advanced Power Electronics Corp. USA
| Status | ACTIVE |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL AND P-CHANNEL |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (ID) | 11.7 A |
| Drain-source On Resistance-Max | 0.0360 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | ROHS COMPLIANT PACKAGE-5 |
| Number of Elements | 2 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 50 A |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
