AP4409AGEM
14.5 A, 35 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min35 V
Drain Current-Max (ID)14.5 A
Drain-source On Resistance-Max0.0075 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT, SOP-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2.5 W
Pulsed Drain Current-Max (IDM)50 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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