AP4409AGEM 14.5 A, 35 V, 0.0075 ohm, P-CHANNEL, Si, POWER, MOSFET
From Advanced Power Electronics Corp. USA
Status | ACTIVE |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 35 V |
Drain Current-Max (ID) | 14.5 A |
Drain-source On Resistance-Max | 0.0075 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | ROHS COMPLIANT, SOP-8 |
Number of Elements | 1 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 2.5 W |
Pulsed Drain Current-Max (IDM) | 50 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |