AP2625GY
2 A, 30 V, 0.185 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)2 A
Drain-source On Resistance-Max0.1850 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT PACKAGE-6
Number of Elements2
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.2 W
Pulsed Drain Current-Max (IDM)20 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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