AP15T20GS-HF 10 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From Advanced Power Electronics Corp. USA
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 10 A |
Drain-source On Resistance-Max | 0.2500 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 26 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |