AP13P15GH-HF
13 A, 150 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

From Advanced Power Electronics Corp. USA

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min150 V
Drain Current-Max (ID)13 A
Drain-source On Resistance-Max0.3000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)52 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links