Product Datasheet Search Results:

1N5806+JAN.pdf16 Pages, 429 KB, Scan
1N5806+JAN
Defense Electronics Supply Center
2.5A Iout, 150V Vrrm Fast Recovery Rectifier
1N5806+JANS.pdf16 Pages, 429 KB, Scan
1N5806+JANS
Defense Electronics Supply Center
2.5A Iout, 150V Vrrm Fast Recovery Rectifier

Product Details Search Results:

Dla.mil/1N5806+JAN
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JAN1N5806","@I(R) (A) (Test Condition)":"500m"}...
1031 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806+JANS
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANS1N5806","@I(R) (A) (Test Condition)":"500m"}...
1037 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806+JANTX
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANTX1N5806","@I(R) (A) (Test Condition)":"500m"}...
1043 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806+JANTXV
{"@Temp. (°C) (Test Condition)":"175","I(RM) Max.(A) Pk. Rev. Current":"5.0m","t(rr) Max.(s) Rev.Rec. Time":"25n","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"875m","Package":"Axial-4","I(O) Max.(A) Output Current":"2.5","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"1.0","Mil Number":"JANTXV1N5806","@I(R) (A) (Test Condition)":"500m"}...
1048 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806US+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JAN1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@T...
1153 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806US+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANS1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","@...
1159 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806US+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTX1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n","...
1164 Bytes - 18:25:27, 05 October 2024
Dla.mil/1N5806US+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"35","I(O) Max.(A) Output Current":"2.5","@t(w) (s) (Test Condition)":"8.3m","@I(R) (A) (Test Condition)":"500m","V(FM) Max.(V) Forward Voltage":"875m","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"150","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Package":"MELF-5.1","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"500m","Military":"Y","Mil Number":"JANTXV1N5806US","Semiconductor Material":"Silicon","t(rr) Max.(s) Rev.Rec. Time":"25n",...
1171 Bytes - 18:25:27, 05 October 2024
Eic_semiconductor/1N5806US
{"Rectifier Type":"Switching Diode","Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"35(A)","Forward Current":"2500(mA)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Through Hole","Peak Reverse Current":"1(uA)","Forward Voltage":"0.875(V)","Packaging":"Tape and Reel","Rev Curr":"1(uA)","Rad Hardened":"No","Rev Recov Time":"25(ns)","Package Type":"DO-41","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.875(V)","Configuration":"Single","Pin Count":"2"}...
1558 Bytes - 18:25:27, 05 October 2024
Microchip.com/1N5806
{"Peak Rep Rev Volt":"150(V)","Peak Non-Repetitive Surge Current":"35(A)","Peak Reverse Recovery Time":"25(ns)","Mounting":"Through Hole","Rad Hardened":"Yes","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Package Type":"Case A","Maximum Forward Current":"2500(mA)","Peak Forward Voltage":"0.975(V)","Peak Reverse Current":"1(uA)","Configuration":"Single","Pin Count":"2"}...
1464 Bytes - 18:25:27, 05 October 2024
Microchip.com/1N5806US
1053 Bytes - 18:25:27, 05 October 2024
Microchip.com/GRP-DATA-JANS1N5806US
914 Bytes - 18:25:27, 05 October 2024