Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"100","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"10.4","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"11","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"10.4","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"11","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.55","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14.5","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"10.5","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.5","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"103","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"100","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.55","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14.5","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"10.5","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.5","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"103","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.92","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"16.2","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"12.1","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"11","V(BR) Min.(V)Breakdown Voltage":"9.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"93","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"89.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"158","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"121","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"99","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"94","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"152","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"116","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"105","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.9","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"89.2","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"158","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"121","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"110","V(BR) Min.(V)Breakdown Voltage":"99","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"9.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...